Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties




Author: Hamid Bentarzi
Type: eBook
Date Released: 2011
Format: pdf
Language: English
Page Count: 119
Isbn10 Code: 3642163033
Isbn13 Code: 9783642163036


From the Back Cover This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

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